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PD-97271 RevA
Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives
Description
IRAM136-0461G Series 4A, 600V
International Rectifier's IRAM136-0461G is an Integrated Power Module developed and optimized for electronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive applications, such as fan or refrigerator compressor drives, this module offers the highest level of integration available in the market today. It features an input diode rectification bridge and a three-phase inverter, complete with bootstrap diodes, high voltage gate driver IC, current shunt resistor and temperature sensor. This high performance AC motor-driver is housed in a compact single-in-line isolated package for a very simple design. The internal shunt offers easy current feedback for precise control and safe operation. A built-in temperature monitor and logic level shut-down function, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Features
* * * * * * * * * * * Internal Rectifier Diode Bridge Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.1~0.3kW / up to 253V, 50/60Hz Isolation 2000VRMS /1min
1
23
Absolute Maximum Ratings
Parameter VRRM VCES V+ IO @ TC=25C IO @ TC=100C IO PK FPWM Pd VISO TJ (IGBT & Diodes) TJ (Driver IC) T Description Input Bridge Blocking Voltage IGBT Blocking Voltage Positive Bus Input Voltage RMS Phase Current (FPWM=20kHz) RMS Phase Current (FPWM=20kHz) Pulsed RMS Phase Current (tp<100ms, FPWM=20kHz) PWM Carrier Frequency Power dissipation per IGBT @ TC =25C Isolation Voltage (1min) Operating Junction temperature Range Operating Junction temperature Range Mounting torque (M3 screw) Max. Value 600 600 450 3.6 2 5 20 16 2000 -40 to +150 -40 to +150 1.0 kHz W VRMS C Nm V Units
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IRAM136-0461G
Internal Electrical Schematic - IRAM136-0461G
AC (1) D10 D11 Q1 D1 D12 AC (2) Vbus_1 (3) D13 Q4 D4 Q5 D5 Q6 D6 Q2 D2 Q3 D3
Vbus_2 (4) R10 GND_1 (5)
R1 VB1 (11) U, VS1 (12) VB2 (9) V, VS2 (10) VB3 (7) W, VS3 (8) D7 D8 D9 D14
R2 D15
R3 D16
R4 D17
R5
R6 D18 D19
23 VS1
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
LO1 16 LO2 15
R9 HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) ITRIP(21) Shunt+ (22) VTH (13) VCC (14) VSS (23) THERMISTOR
24 HO1 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13
Driver IC
LO3 14
R8
R7
C5
2
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IRAM136-0461G
Absolute Maximum Ratings (Continued)
Symbol IDC IF(AV) IFSM It It
2 0.5 2
Parameter Input Bridge DC Output Current Average Output Forward Current Peak One Cycle Non-Repetitive Surge Current @ TJ =150C I t for fusing It
2 0.5 2
Max 9.4 8.7 100 95 45.12 638
Units A A A A As As
2 0.5 2
@TC=100C, 180 cond. square wave @TC=100C, 180 cond. sine wave 8.3ms Sine Pulse rated VRRM applied 10ms Sine Pulse 80% rated VRRM applied 10ms Sine Pulse 80% rated VRRM applied t=0.1 to 10 ms, no Voltage applied
for fusing
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM/VSS. Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Bootstrap Resistor Peak Power (Single Pulse) High Side floating supply voltage High Side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, ITrip Min ----VB1,2,3 - 25 -0.3 -0.3 Max 4.5 25.0 VB1,2,3 +0.3 600 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150C, TC=100C tP=100s, TC =100C
VIN
-0.3
V
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IRAM136-0461G
Input Bridge Section Electrical Characteristics @TJ= 25C
Symbol VFM rt VF(TD) IRM Parameter Forward Voltage Drop Forward Slope resistance Threshold Voltage Reverese Leakage Current Min ------------Typ 1 0.9 22 0.81 2 115 Max 1.2 1.05 59 0.84 15 190 Units V V m V A TJ=25C, VR= rated VRR TJ=150C, VR= rated VRR Conditions @ IFM = 4A, TJ=25C @ IFM = 4A, TJ=150C TJ=150C
Inverter Section Electrical Characteristics @TJ= 25C
Symbol V(BR)CES V(BR)CES / T VCE(ON) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Collector-to-Emitter Saturation Voltage Zero Gate Voltage Collector Current Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Min 600 --------------VBDFM RBR RBR/RBR -------Typ --0.74 1.95 2.40 1 160 1.25 1.20 ---22 --Max ----2.20 2.80 75 --1.65 1.60 1.25 1.10 --5 % V V A Units Conditions V V/C V VIN=5V, IC=250A VIN=5V, IC=1.0mA (25C - 150C) IC=2A, VCC=15V IC=2A, VCC=15V, TJ=150C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150C IC=2A IC=2A, TJ=150C IF=1A IF=1A, TJ=125C
ICES
VFM
4
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IRAM136-0461G
Inverter Section Switching Characteristics @ TJ= 25C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG RBSOA Parameter Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-on Swtiching Loss Turn-off Switching Loss Total Switching Loss Diode Reverse Recovery energy Diode Reverse Recovery time Turn-On IGBT Gate Charge Min ----------------------Typ 180 65 245 5 240 210 80 290 15 285 0.84 FULL SQUARE Max 260 140 400 15 --305 150 455 35 --1.3 ns nC See CT1 IC=2A, V+=400V, VGE=15V TJ=150C, IC=2A, VP=600V Reverse Bias Safe Operating Area V+= 450V VCC=+15V to 0V TJ=150C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 ----s V+= 360V, VCC=+15V to 0V See CT2 See CT3 J ns See CT1 IC=2A, V+=400V VCC=15V, L=1mH, TJ=150C Energy losses include "tail" and diode reverse recovery J Units Conditions IC=2A, V+=400V VCC=15V, L=1mH Energy losses include "tail" and diode reverse recovery
TJ=150C, VP=600V, tSC<10s ICSC Short Circuit Collector Current --11 --A V+= 360V, VGE=15V VCC=+15V to 0V See CT2
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IRAM136-0461G
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM/VSS. The offset is tested with all supplies biased at 15V differential (Note 2) Symbol AC AC VB1,2,3 VS1,2,3 VCC VITRIP VIN Definition AC input voltage AC input frequency High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage ITRIP input voltage Logic input voltage LIN, HIN Min --50 VS+12 Note 3 12 VSS VSS Max 253 60 VS+20 450 20 VSS+5 VSS+5 V V Units V Hz V
Note 2: For more details, see IR21365 data sheet Note 3: Logic operational for VS from GND -5V to GND +600V. Logic state held for VS from GND -5V to GND -VBS. (please refer to DT97-3 for more details)
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS/COM and are applicable to all six channels. (Note 2) Symbol VIH VIL VCCUV+ VBSUV+ VCCUVVBSUVVCCUVH VBSUVH VIN,Clamp IQBS IQCC ILK IIN+, IEN+ IIN-, IENITRIP+ ITRIPDefinition Logic "0" input voltage Logic "1" input voltage VCC and VBS supply undervoltage Positive going threshold VCC and VBS supply undervoltage Negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10A Quiescent VBS supply current VIN=0V Quiescent VCC supply current VIN=0V Offset Supply Leakage Current Input bias current VIN=5V Input bias current VIN=0V ITRIP bias current VITRIP=5V ITRIP bias current VITRIP=0V Min 3.0 --10.6 Typ ----11.1 Max --0.8 11.6 Units V V V
10.4
10.9
11.4
V
--4.9 ---------------
0.2 5.2 ------200 100 30 0
--5.5 165 3.35 60 300 220 100 1
V V A mA A A A A A
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IRAM136-0461G
Static Electrical Characteristics Driver Function (Continued)
Symbol V(ITRIP) V(ITRIP,HYS) RON,FLT Definition ITRIP threshold Voltage ITRIP Input Hysteresis Falut Output ON Resistance Min 3.85 ----Typ 4.3 150 70 Max 4.75 --100 Units V mV Ohm
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified. Symbol TON TOFF TFLIN TBLT-Trip DT MT TITrip TFLT-CLR Parameter Input to Output propagation turnon delay time (see fig.11) Input to Output propagation turnoff delay time (see fig. 11) Input Filter time (HIN, LIN) ITRIP Blancking Time Dead Time (VBS=VCC=15V) Matching Propagation Delay Time (On & Off) ITrip to six switch to turn-off propagation delay (see fig. 2) Post ITrip to six switch to turn-off clear time (see fig. 2) Min ----100 100 220 --------Typ 700 515 200 150 290 40 --7.7 6.7 360 75 1.75 ----Max ------Units Conditions ns VCC=VBS= 15V, IC=2A, V+=400V ns ns ns ns ns s ms VIN=0 & VIN=5V VIN=0 & VIN=5V VBS=VCC=15V VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, IC=10A, V+=300V TC = 25C TC = 100C
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IRAM136-0461G
Thermal and Mechanical Characteristics
Symbol Rth(J-C) IGBT Rth(J-C) FW Diode Rth(J-C) Input Diode Rth(C-S) T Parameter Junction to case thermal resistance (IGBT). Junction to case thermal resistance (FW Diode). Junction to case thermal resistance (Input Diode). Case to Sink thermal resistance Mounting Tourque Min --------0.5 Typ 6.6 8.8 6.0 0.1 0.6 Max 7.6 10.8 7.5 --1.0 Nm Mounting Tourque Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK Units Conditions
Internal Current Sensing Resistor - Shunt Characteristics
Symbol RShunt TCoeff PShunt TRange Parameter Resistance Temperature Coefficient Power Dissipation Temperature Range Min 336.6 0 ---40 Typ 340.0 ------Max 343.4 200 1.5 125 Units Conditions m ppm/C TC = 25C
W
C
-40C< TC <100C
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Definition Resistance Resistance B-constant (25-50C) Min 20.9 2.25 3832 -40 1 Typ 22 2.52 3950 Max 23.1 2.5 4335 125 Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range Typ. Dissipation constant
Thermistor Pin Connection
+5V 2kOhm
Driver IC NTC
VTH (13) VSS (23)
8
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IRAM136-0461G
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Name AC AC Vbus_1 Vbus_2 GND na VB3 W,VS3 VB2 V,VS2 VB1 U,VS1 VTH VCC HIN1 HIN2 HIN3 LIN1 LIN2 LIN3 ITRIP Shunt+ VSS Description AC Input AC Input Input Bridge Positive Output Positive Bus Input Voltage Negative Bus Input Voltage none High Side Floating Supply voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage 2 High Side Floating Supply voltage 1 Output 1 - High Side Floating Supply Offset Voltage 1 Temperature Feedback +15V Main Supply Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Current Sense and Itrip Pin Positive Current Sense Logic Ground
1
23
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IRAM136-0461G
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Figure1. Input/Output Timing Diagram Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load.
Input-Output Logic Level Table
V+
Hin1,2,3
Ho
ITRIP
U,V,W
HIN1,2,3 0 1 1 X
LIN1,2,3 1 0 1 X
U,V,W V+ 0 X X
(15,16,17)
IC Driver
(8,10,12)
Lo
Lin1,2,3
(18,19,20)
0 0 0 1
10
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IRAM136-0461G
Typical Application Connection IRAM136-0461G
1
AC AC
AC INPUT
In-Rush Control DC BUS CAPACITORS BOOT-STRAP CAPACITORS
Vbus_1 Vbus_2 GND
VB3
IRAM136-0461G
W,VS3 VB2
3-Phase AC MOTOR
V,VS2 VB1 U,VS1
+5V
Temperature Monitor
VTH VCC HIN1 HIN2
PWM in HIN3 PWM in LIN1 PWM in LIN2 PWM in PWM in PWM in Itrip (Logc Level) VSS Current Sense LIN3 ITRIP Shunt+
CONTROLLER
23
15V
0.1
10m
1. Electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and EMI problems. Additional high frequency ceramic capacitors mounted close to the module pins will improve performance. 2. In order to provide good decoupling between VCC-VSS and VB-VS terminals, the capacitors connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. 4. Current sense signal can be obtained from pin 22 and pin 23 5. After approx. 9 ms the FAULT is reset 6. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, and the overcurrent condition must be cleared before resuming operation
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IRAM136-0461G
4.5 Maximum Output Phase RMS Current - A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz TC = 80C TC = 90C TC = 100C TJ = 150C Sinusoidal Modulation
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency VBUS=400V , TJ=150C, Modulation Depth=0.8, PF=0.6
Maximum Output Phase RMS Current - A
3.0
TJ = 150C
2.5
Sinusoidal Modulation
2.0
1.5
FPWM = 20kHz FPWM = 16kHz FPWM = 10kHz
1.0
0.5
0.0 0 10 20 30 40 50 60 70 80 90 100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency VBUS=400V, TJ=150C, TC=100C, Modulation Depth=0.8, PF=0.6
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IRAM136-0461G
35 30
TJ = 150C Sinusoidal Modulation
Total Power Losses - W
25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20
IOUT = 1.0 ARMS IOUT = 1.5 ARMS IOUT = 2.0 ARMS
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation VBUS=400V , TJ=150C, Modulation Depth=0.8, PF=0.6
80 70
Total Power Losses - W
TJ = 150C Sinusoidal Modulation
60 50 40 30 20 10 0 0.0
FPWM = 10 kHz FPWM = 16 kHz FPWM = 20 kHz
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150C, Modulation Depth=0.8, PF=0.6
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IRAM136-0461G
Maximum Allowable Case Temperature -C
160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.5
FPWM = 10 kHz FPWM = 16 kHz FPWM = 20 kHz
TJ = 150C Sinusoidal Modulation
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
160
IGBT Junction Temperature - C
TJ avg. = 1.0775 x TTherm+ 9.6086
150
140
130
120
110
100 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 150
Internal Thermistor Temperature Equivalent Read Out - C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature VBUS=400V, IPHASE=1.3ARMS, FPWM=16kHz
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IRAM136-0461G
5.0
Thermistor Pin Read-Out Voltage - V
+5V
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 -40
REXT
TTHERM C -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 RTHERM TTHERM k C 759.605 25 545.196 396.070 291.025 216.008 161.977 122.638 93.702 72.191 56.093 43.907 34.633 27.509 30 35 40 45 50 55 60 65 70 75 80 85 RTHERM k 22.000 17.709 14.344 11.688 9.578 7.894 6.540 5.446 4.559 3.832 3.239 2.748 2.342 TTHERM C 90 95 100 105 110 115 120 125 RTHERM k 2.004 1.722 1.486 1.287 1.119 0.975 0.854 0.750
VTherm R Therm
Min Avg. Max
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110 120 130
Thermistor Temperature - C
Figure 9. Thermistor Readout vs. Temperature (2kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table.
12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0
3.3F 4.7F 6.8F
VSS V+ RG1 HO VS LO U,V,W RG2
Recommended Bootstrap Capacitor - F
10F
+15V HIN LIN
RBS
DBS vB VCC HIN LIN VSS COM
CBS
GND
3.0 2.0 1.0 0 5 10 15 20
2.2F 1.5F
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM136-0461G
4.0 3.5
tP = 400s Square Wave
Forward voltage Drop - V
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 50
TJ = 25C TJ = 150C
Instantaneous Forward Current - A
Figure 11. Maximum Forward voltage Drop (Input Bridge Rectifier)
30
Total Power Losses - W
TJ = 150C
20
10
180 Sine Conduction 180 Rect Conduction
0 0 1 2 3 4 5 6 7 8 9 10
Bridge Output Current - AAVG
Figure 12. Maximum Power Loss vs. Output Current (Input Bridge Rectifier)
16
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IRAM136-0461G
Maximum Allowable Case Temperature -C
150 140 130 120 110 100 90 80 0 1 2 3 4 5 6 7 8 9 10
180 Sine Conduction 180 Rect Conduction
Bridge Output Current - AAVG
Figure 13. Maximum Allowable Case Temperature vs. Output Current (Input Bridge Rectifier)
Peak Half Sine-Wave Forward Current - A
110 100 90 80 70 60 50 40 30 20 1 10 100
At Any rated Load Condition 80% VRRM Applied After Surge Initial TJ = 150C @60Hz 0.0083s @50Hz 0.0100s
Half Cycle Current Pulse - n
Figure 14. Input Bridge Maximum Non-Repetitive Surge Current
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IRAM136-0461G
Figure 11. Switching Parameter Definitions
VCE
50% HIN /LIN
IC
IC
90% IC
VCE HIN /LIN
90% IC
50% VCE
HIN /LIN
50% HIN /LIN 50% VCE
10% IC
10% IC
tr TON
Figure 11a. Input to Output propagation turn-on delay time.
tf TOFF
Figure 11b. Input to Output propagation turn-off delay time.
IF VCE
HIN/LIN
Irr trr
Figure 11c. Diode Reverse Recovery.
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IRAM136-0461G
V+
5V
Ho
IN
Hin1,2,3
IC Driver Lo
U,V,W
IO
Lin1,2,3
Figure CT1. Switching Loss Circuit
V+
Hin1,2,3 1k VCC 5VZD IN 10k Lin1,2,3
Ho
IN
U,V,W
IC Driver Lo
IO
Io
Figure CT2. S.C.SOA Circuit
V+
Hin1,2,3 1k VCC 5VZD 10k
IC Driver
Ho
IN
U,V,W
Lin1,2,3 IN
Lo
IO
Io
Figure CT3. R.B.SOA Circuit
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IRAM136-0461G
Package Outline
note 3 note 2
62 3 56
A
B
O3.4 TYP. 11.4 REF. 11.4 22.3
027-E2D24
21.8
IRAM136-0461G
1
23
note 1
2 TYP.
O0.20 A B
22 PITCHES = 44
46.2
4.7 INT. 50 2 TYP 5.0 3.2 CONVEX ONLY 0.10 C
C
5
2.5 INT.
R0.6 TYP.
Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking For mounting instruction, see AN1049
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 2006/12
20
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9.0 REF.
11.4 REF
0.80 TYP 0.55
20.4 0.70 0.45
TYP
SCALE:4/1

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